1983 IEEE MTT-S International Microwave Symposium Digest
... directly cascaded GaAs FET monolithic preamplifier chip realized using truly lumped elements for both RF and DC circuitry. ... The design is based on a nominal 1 micron gate length interdigi- tal FET geometry of planar construction. ... INTRODUCTION As a building block circuit for more complex GaAs MMIC receiver chip development, there is a need for a ... If the design is to compete in performance with its hybrid MIC equivalent, the FET design and process technology must beanbsp;...
| Title | : | 1983 IEEE MTT-S International Microwave Symposium Digest |
| Author | : | |
| Publisher | : | - 1983 |
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